用蒙特卡罗方法计算X射线在酞菁铜与重金属界面的剂量增强系数

Abstract

Abstract: The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials. The dose-enhancement-factors of Au-CuPci,W-CuPc and Ta-CuPc interfaces were calculated via the Monte-Carlo method. The calculated results demonstrate that there exists stronger dose-enhancement on the CuPc side near the interface when the energy of X-ray is between 100 keV and 150 keV.

Key words: organic semiconductor, X-ray, dose-enhancement-factor, interface

CLC Number:

O434.1

ZHAO Bao kui, ZHAO Guang yi, ZHOU Yin hang, MA Yu gang, DONG Wen bin. Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High ZMetal Interface[J].J4, 2007, 45(03): 448-450.

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Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High ZMetal Interface

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