Journal of Jilin University (Information Science Edition) ›› 2021, Vol. 39 ›› Issue (6): 695-699.

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Design and Practice of Comprehensive Experiment on Static Parameter Performance of MOS

HE Yuan, NIU Ligang, LI Xin, JI Yongcheng, MA Jian, WANG Rui   

  1. College of Electrnic Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2021-05-26 Online:2021-12-01 Published:2021-12-02

Abstract: In order to deepen students' understanding of semiconductor device performance, a comprehensive experimental project and performance tester of static parameters of MOS ( Matal-Oxide-Semiconductor ) is designed and developed according to the characteristics of undergraduate experimental teaching. This tester can measure a number of parameters either by item or by combination. It is helpful to deepen students' understanding of device performance, and is helpful to cultivate students' practical ability. Years of practice have shown that this comprehensive experimental project is helpful to improve students' learning interest and thinking of the basic course “Semiconductor Device Physics". In teaching practice, students change from passive learning to active experimental designers and participants. It has realized the interaction between teachers and students and the cooperation between students, and achieved good teaching results.

Key words: microelectronics, semiconductor device, matal-oxide-semiconductor (MOS) device, Static parameters

CLC Number: 

  • TP212