Abstract:

To solve the the metal/cubic boron nitride (c-BN) contact problem, we put forward the Si doping of cubic boron nitride single crystal on the surface of the Cuzinc alloy probe, the surface uses the Ag plasma sintering, the preparation of a space charge limited schottky diode. The experimental data showed that the characteristics of IV at room temperature, the device in DC10 V when the rectification ratio is 370; the positive current and voltage is two times the power function relationship. With the space charge limited current and thermionic emission theory, the experimental results are analyzed, and the equivalent circuit model of the sample device.

Key words: metal/cubic boron nitride, rectifier, space charge limited current, equivalent circuit model