吉林大学学报(理学版) ›› 2026, Vol. 64 ›› Issue (5): 1186-1192.

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摆线型NiBr2的电子结构及电输运性质的各向异性

王睿1, 杨国晖2, 辛延波1, 刘阿鹏1, 贾慧兰1   

  1. 1. 山西工程技术学院 基础课教学部, 山西 阳泉 045000; 2. 山西师范大学 物理与信息工程学院, 太原 030031
  • 收稿日期:2025-05-29 出版日期:2026-09-26 发布日期:2026-09-26
  • 通讯作者: 杨国晖 E-mail:19834108250@163.com

Electronic Structure and Anisotropy of Electrical Transport Properties of Cycloidal Type NiBr2

Wang Rui1, Yang Guohui2, Xin Yanbo1, Liu Apeng1, Jia Huilan1   

  1. 1. Department of Fundamental Courses, Shanxi Institute of Technology, Yangquan 045000, Shanxi Province, China; 2. School of Physics and Electronic Engineering, Shanxi Normal University, Taiyuan 030031, China
  • Received:2025-05-29 Online:2026-09-26 Published:2026-09-26

摘要: 采用多尺度计算模拟研究NiBr2单层材料晶格应变对磁态稳定性的调控机制, 分析其电子结构与电输运各向异性的物理起源. 结合密度泛函理论(DFT)+U与基于Perdew-Burke-Ernzerhof(PBE)泛函的PBE0杂化泛函精确修正电子结构, 利用PBE能量计算确定稳定磁构型, 并借助AMSET软件模拟300~900 K下的电导率(σ)和Seebeck系数(S), 分析载流子浓度与输运行为的关联. 结果表明: 当晶格常数为0.369 nm时, 摆线型螺旋磁序能量最低, 与实验观测的非共线磁序吻合; PBE0计算所得带隙值为3.60 eV, 与实验值(3.4±0.2)eV相符; σ呈极强各向异性, 室温下σa/σc≈125, 900 K下σa/σc≈480, 这是由于c轴极高的真空势垒抑制所致; S在p型掺杂中存在临界载流子浓度阈值, 超过阈值后发生反转(Sc>Sa), 这是由于高浓度下a轴态密度变化率饱和及c轴平缓能带贡献增强所致. 该结果揭示了NiBr2单层电输运性质的各向异性, 为低维磁性半导体器件的实验探索提供了理论基础. 

关键词:  , 溴化镍, 密度泛函理论, 非共线磁结构, 电输运性质, 第一性原理, 各向异性

Abstract: We used multi-scale computational simulations to study the modulation mechanisms by which lattice strain regulated magnetic stability of monolayer NiBr2, and analyzed the physical origins of its electronic structure and electrical transport anisotropy. We combined density functional theory (DFT)+U with Perdew-Burke-Ernzerhof (PBE) functional based PBE0 hybrid functional to accurately modify the electronic structure, determined the stable magnetic structure by using energy calcuations of PBE, and simulated the electrical conductivity (σ) and the Seebeck coefficient (S) at 300—900 K using AMSET to analyze the correlation between carrier concentration and transport behavior. The results show that when a lattice constant is 0.369 nm, the energy of the cycloidal spiral magnetic order is the lowest, which is consistent with the non-collinear magnetic order observed in the experiment. The band gap value of PBE0-calculated (3.60 eV) is same as the experimental value ((3.4±0.2)eV). σ exhibits extreme anisotropy, σa/σc≈125 at room temperature, σa/σc≈480 at 900 K, this is due to the extremely high vacuum potential barrier suppression along the c-axis. S exhibits a critical carrier concentration threshold in p-type doping, which reverses after exceeding the threshold (Sc>Sa). This is due to the saturation of the density-of-states gradient along the a-axis at high carrier densities and the enhanced contribution from dispersionless bands along the c-axis. These results reveal the anisotropy of electrical transport properties of monolayer NiBr2, providing a theoretical foundation for the experimental exploration of low-dimensional magnetic semiconductor devices. 

Key words: nickel bromide, density functional theory, noncollinear magnetic structure, electrical transport property, first principles, anisotropy

中图分类号: 

  • O469