Abstract: A ZnO thin film was grown on substrate Si by RF reactive magnetron sputtering. The X-ray diffraction (XRD) pattern of the sample shows a sharp diffraction peak for ZnO(002), which indicates that as-sputtered film is highly c-axis oriented. In the experiment, we made the profile of depth, measured ZnO in the various depths, and did qualitative and quantitative calculation. The results indicate the sample is uniform unitary phase consistent the positive stoichiometric ratio before etch reaching the interface, which shows this method could be employed to grow films well. But on the interface, the chemical shift of Zn Auger modify shape, the change of Zn Auger peak shape, the ratio of Zn_2p3/2 and Zn_LMM peaks integral a reas, the asymmetry of Si_2p peak all show the effect of forming t he bond on the interface of Si and ZnO. And n-Si is changed into p-Si on the int erface.

Key words: thin film, XPS, interface