Abstract: The resistance of ZnS was in-situ measured under high pressure by using integrated microcircuit on DAC with an alumina film as a insulating layer. It has been confirmed that the phase transition of ZnS is a semiconductor to semiconductor phase transition, not a semiconductor to metallic phase transition. The reversibility of the phase transition of ZnS is observed. In addition, the hysteresis of the phase transition of ZnS was found.

Key words: electrical transition, high-pressure, ZnS, resistivity 