6H-SiC衬底上InN单晶薄膜的RF-MBE生长

Abstract

Abstract:

The growth of wurtzite indium nitride (InN) films was investigated by means of radio\|frequency plasma-assisted molecular beam epitaxy (RF\|MBE) on 6H\|SiC substrates. In\|situ X-ray photoelectron spectra were used to determine the Wagner plot of InN. The auger parameter α′ is 85276 eV. The mass radio of In to N in InN is 1.19; the sample surface of InN/6H\|SiC, observed by an scanning electron microscope and atomic force microscope, is reticular structure without indium droplets; X-ray diffraction results show that the films have a preferential c-axis orientation normal to the substrate surface, FWHM of InN (0002) rocking curve is 326 arcmin; and the room temperature photoluminescence peak is at about 1 575 nm.

Key words: molecular beam epitaxy, InN, 6H-SiC, photoelectron spectra, X-ray diffraction, photoluminescence

CLC Number:

TB332

CHEN Chun-Sheng, TUN Guo-Guang, GAO Fu-Bin, MA Yan, DU Guo-Tong, LI Mo-Cheng. InN Films Grown on 6H\|SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J].J4, 2012, 50(06): 1247-1251.

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InN Films Grown on 6H\|SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

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