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界面电子转移对纳米TiO2薄膜导电性的影响

顾广瑞1,2, 何 志1, 李英爱1, 张崇 才3, 李卫青1, 殷 红1, 赵永年 1   

  1. 1. 吉林大学超硬材料国家重点实验室, 长春, 130023; 2. 延边大学理工学院, 延吉 133002;3. 四川工业学院, 成都 610039
  • 收稿日期:2001-09-03 修回日期:1900-01-01 出版日期:2002-07-26 发布日期:2002-07-26
  • 通讯作者: 顾广瑞

Influence of Interface Electrons Transfer on Conductivity of Nanometer TiO2 Thin Films

GU Guang-rui1,2, HE Zhi1, LI Ying-ai1, ZHANG Chong-cai3,LI Wei-qing1, YIN Hong1, ZHAO Yong-nian1   

  1. 1. National Laboratory of Superhard Materials, Jilin University, Changchun 130023, China;2. College of Science and Engineering, Yanbian University, Yanji 133002, China;3. Sichuan University of Science and Technology, Chengdu 610039, China
  • Received:2001-09-03 Revised:1900-01-01 Online:2002-07-26 Published:2002-07-26
  • Contact: GU Guang-rui

摘要: 研究纳米TiO2薄膜的导电性与薄膜厚度和基底材料的关系. 结果表明, 沉积在Ti和Si基底上的TiO2薄膜的电阻率随着膜厚的 增加而非线性增大, 分别经历了导体、 半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程, Ti O2薄膜导电层厚度也不相同, 沉积在玻璃表面TiO2薄膜为绝缘体. 这些现象是界面电子在界面的转移所致, 基底材料与薄膜功函数差的大小决定了导电层厚度.

关键词: 纳米TiO2薄膜, 电阻率, 界面电子转移

Abstract: The present paper presents the dependence of the conduc tivity of TiO2 thin films on the different substrates and on the thick ness of the films. It was found that the resistivity of the TiO2 thin films de posited on Ti and Si substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on diff erent substarte materials is different and the films deposited on glass are nonc onductors. This is attributed to interface electrons transfer, and the conducting layer thickness is determined by the work function difference between substrates and thin films.

Key words: nanometer TiO2 thin films, conductivity, transfer of electrons

中图分类号: 

  • O647.2