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氮掺杂(10,0)单壁碳纳米管的电子结构

于陕升, 温庆波, 郑伟涛   

  1. 吉林大学 材料科学与工程学院, 长春 130012
  • 收稿日期:2007-02-12 修回日期:1900-01-01 出版日期:2008-01-26 发布日期:2008-01-26
  • 通讯作者: 郑伟涛

Electronic Structures of Nitrogen-doped (10,0) Single-walled Carbon Nanotubes

YU Shan sheng, WEN Qing bo, ZHENG Wei tao   

  1. College of Materials Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2007-02-12 Revised:1900-01-01 Online:2008-01-26 Published:2008-01-26
  • Contact: ZHENG Wei tao

摘要: 利用密度泛函第一原理研究不同氮掺杂方式(10,0)单壁碳纳米管的电子结构. 当氮原子取代碳纳米管中的碳原子时, (10,0)单壁碳纳米管转变为n型半导体. 当氮原子吸附在碳纳米管表面时, (10,0)单壁碳纳米管转变为p型半导体, 同时与吸附氮原子相连碳原子的p轨道上的小部分电子被激发至d轨道上. 

关键词: 碳纳米管, 氮, 掺杂, 电子结构

Abstract: Calculations have been made for the electronic structures of (10,0) single-walled carbon nanotube containing nitrogen impurity atoms by means of abinitiodensity functional theory. When carbon atom of carbonnanotube is substituted by nitrogen atom, the carbon nanotube will be turned into n-type semiconductor. However, when nitrogen atom is absorbed on the outer surface of the carbon nanotube, it will be transformed into p-type semiconductor. And a portion of electrons inp orbital at the carbon atom adjacent to nitrogen is excited into d orbital. 

Key words: carbon nanotube, nitrogen, doping, electronic structure

中图分类号: 

  • TB383