CdSe纳米棒阵列的制备及其光电化学性能

吉林大学学报(理学版)

CdSe纳米棒阵列的制备及其光电化学性能

田乐成¹, 杨海滨^2, 李云辉^1, 绍晶^1, 孙晶^1, 董群^1,凌宏志^1, 王硕^3, 温祖旺³, 张鑫¹, 丁娟⁴

1. 长春理工大学化学与环境工程学院, 长春 130022; 2. 吉林大学超硬材料国家重点实验室, 长春 130012;3. 长春理工大学材料科学与工程学院, 长春 130022; 4. 吉林大学珠海学院公共基础课教学与研究中心, 广东珠海 519041

收稿日期:2015-08-05 出版日期:2016-07-26 发布日期:2016-07-20
通讯作者: 丁娟 E-mail:8151682@qq.com

Synthesis and Photoelectrochemical Propertiesof CdSe Nanorods Arrays

TIAN Lecheng¹, YANG Haibin^2, LI Yunhui¹, SHAO Jing¹, SUN Jing¹, DONG Qun¹,LING Hongzhi¹, WANG Shuo³, WEN Zuwang³, ZHANG Xin¹, DING Juan^4

1. College of Chemistry and Environmental Engineering, Changchun University of Science and Technology, [JP2]Changchun 130022, China; 2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;[JP]3. College of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China; 4. Public Basic Course Teaching and Research Center, Zhuhai College, Jilin University, Zhuhai 519041, Guangdong Province, China

Received:2015-08-05 Online:2016-07-26 Published:2016-07-20
Contact: DING Juan E-mail:8151682@qq.com

摘要/Abstract

摘要：

在室温条件下, 用电化学沉积方法在铟锡氧化物(ITO)基底表面生长CdSe纳米棒阵列, 并利用X射线衍射(XRD)、能量色散X射线(EDX)、场发射扫描电子显微镜(
FESEM)和紫外可见吸收光谱(UVVis)表征CdSe纳米棒阵列的晶体结构和表面形貌, 考察其光电化学性能; 在标准三电极体系下, 测试CdSe纳米棒阵列电极的光电化学性能. 结果表明：样品沿\[001\]方向择优生长, 并具有明显的光响应特性；在光强为100 mW/cm²的模拟太阳光照射下, 该电极光电流密度

J_sc=2.93mA/cm², 开路电压V_oc=1.16 V, 填充因子FF=0.278, 该电池的光电转化效率η=0.947%.

关键词: CdSe纳米棒, 电化学沉积, 光电化学性能

Abstract:

CdSe nanorods arrays were grown on ITO substrate by electrochemical deposition method at room temperature. Using Xray diffraction (XRD), energy dispersive Xray (EDX), field emission scanning electron microscopy (FESEM) and UVVis absorption spectroscopy, we characterized the CdSe nanorods
array, and studied its photoelectric chemical properties. We tested the photoelectric properties of CdSe nanorods array electrodes under the standard three electrode system. The results show that the sample is preferentially grown along \[001\] direction, and has obvious light response properties. When the light intensity is 100 mW/cm², the optical current density (J_sc), open circuit voltage (V_oc), the fill factor (FF) are 2.93 mA/cm², 116 V, 0278, and the photoelectric conversion efficiency of the battery η=0.947%.

Key words: CdSe nanorod, electrochemical deposition, photoelectric chemical property

中图分类号:

TB383

田乐成, 杨海滨, 李云辉, 绍晶, 孙晶, 董群,凌宏志, 王硕, 温祖旺, 张鑫, 丁娟. CdSe纳米棒阵列的制备及其光电化学性能[J]. 吉林大学学报(理学版), 2016, 54(04): 878-882.

TIAN Lecheng, YANG Haibin, LI Yunhui, SHAO Jing, SUN Jing, DONG Qun,LING Hongzhi, WANG Shuo, WEN Zuwang, ZHANG Xin, DING Juan. Synthesis and Photoelectrochemical Propertiesof CdSe Nanorods Arrays[J]. Journal of Jilin University Science Edition, 2016, 54(04): 878-882.