4He和12C离子Rutherford背散射的Geant4模拟

吉林大学学报(理学版)

⁴He和¹²C离子Rutherford背散射的Geant4模拟

王振超¹, 马玉刚¹, 杨海芳², 牛璐莹³, 周庆¹, 赵广义¹ , 宋明珠^1

1. 吉林大学物理学院, 长春 130012; 2. 唐山市人民医院, 河北唐山 063001; 3. 中国科学院等离子体物理研究所, 合肥 230031

收稿日期:2012-08-20 出版日期:2013-07-26 发布日期:2013-08-06
通讯作者: 马玉刚 E-mail:mayugang@hotmail.com

Geant4\|Based Simulation of ⁴He and ¹²C Ions Rutherford Backscattering on Thin Films

WANG Zhen chao¹, MA Yu gang¹, YANG Hai fang², NIU Lu ying³, ZHOU Qing¹, ZHAO Guang yi¹, SONG Ming zhu¹

1. College of Physics, Jilin University, Changchun 130012, China; 2. Tangshan People’s Hospital, Tangshan 063001, Hebei Province, China; 3. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

Received:2012-08-20 Online:2013-07-26 Published:2013-08-06
Contact: MA Yu gang E-mail:mayugang@hotmail.com

摘要/Abstract

摘要：

利用Geant4程序模拟270,500 keV ⁴He和¹²C离子垂直入射Au,Ag,Cu薄膜上的Rutherford背散射谱（RBS）, 并讨论材料、厚度和入射离子能量对背散射谱的影响. 结果表明, 能量较大的¹²C离子具有较好的质量分辨率.

关键词: Geant4, 重离子, RBS分析, 薄膜

Abstract:

The Rutherford backscattering spectra (RBS) of ⁴He and ¹²C normally incident on Au,Ag,Cu thin films at 270 keV and 500 keV were simulated via Geant4. Effects of different materials, thickness and energy of incident ions on RBS were discussed. The characters of ⁴He, ¹²C RBS were analyzed. It was found that the mass resolution is much better for ¹²C RBS than that for 4He RBS.

Key words: Geant4, heavy-ion, RBS analysis, thin films

中图分类号:

O571.33

王振超, 马玉刚, 杨海芳, 牛璐莹, 周庆, 赵广义,宋明珠. ⁴He和¹²C离子Rutherford背散射的Geant4模拟[J]. 吉林大学学报(理学版), 2013, 51(04): 712-714.

WANG Zhen chao, MA Yu gang, YANG Hai fang, NIU Lu ying, ZHOU Qing, ZHAO Guang yi, SONG Ming zhu. Geant4\|Based Simulation of ⁴He and ¹²C Ions Rutherford Backscattering on Thin Films[J]. Journal of Jilin University Science Edition, 2013, 51(04): 712-714.

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⁴He和¹²C离子Rutherford背散射的Geant4模拟

Geant4\|Based Simulation of ⁴He and ¹²C Ions Rutherford Backscattering on Thin Films

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