J4

• 材料科学 • 上一篇    下一篇

计算机模拟二元ABAC结构薄膜生长

张顺艳1, 许小红2   

  1. 1. 黑龙江省鹤岗师范高等专科学校 数理系, 黑龙江 鹤岗 154107; 2. 山西师范大学 化学与材料科学学院, 山西 临汾 041004
  • 收稿日期:2008-01-15 修回日期:1900-01-01 出版日期:2009-01-26 发布日期:2009-01-26
  • 通讯作者: 许小红

Growth of ABAC Structured Film by Computer Simulation

ZHANG Shun yan1, XU Xiao hong2   

  1. 1. Department of Mathematics and Physics, Hegang Normal College, Hegang 154107, Heilongjiang Province, China; 2. School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, Shanxi Province, China
  • Received:2008-01-15 Revised:1900-01-01 Online:2009-01-26 Published:2009-01-26
  • Contact: XU Xiao hong

摘要: 采用蒙特卡罗方法计算机模拟脉冲激光沉积ABAC结构薄膜生长. 模型采用三重空位扭转, 薄膜质量通过3个参数控制, 即基片温度、 脉冲粒子的剩余能量和单个脉冲覆盖度. 结果表明, 薄膜质量与3个参数相关, 通过分析薄膜的失配率, 得到制备高质量薄膜自组织分层生长的最合理参数. 

关键词: 蒙特卡罗模拟, 脉冲激光沉积, 失配率

Abstract: The growth of ABAC structured film by means of pulsed laser deposition was simulated by the Monte Carlo procedure. In the model, we introduced the three-hollow site with a layer dislocation in order to realize the ABAC growth mode. The quality of the film is controlled by three parameters, namely, the temperature of the substrate, the kinetic energy of the atoms and the coverage of per pulse. The simulated results show that the quality of the films is strongly dependent on the three parameters. We analyzed the mismatch of the film and found the suitable parameters, under which the high quality film can be obtained.

Key words: Monte Carlo simulation, pulsed laser deposition, displacement

中图分类号: 

  • TB383