Abstract: This paper covers organic electrophosphorescent light-emitting diodes with organic phosphorescent compound （PPQ）₂Ir（acac）as dopant and rare-earth complex Tb（eb-PMIP）₃（TPPO）as host.The devices were fabricated via vacuum evaporation with indium-tin-oxide as an anode and LiF/Al as a cathode.A red light with a peak at 615nm was observed，the characteristic emission from the triplet state of （PPQ）₂Ir（acac）.A maximum emissive efficiency of 3.14cd/A was obtained by optimizing device structure and the dopant content.The experimental results demonstrate that rare-earth complexes with wider band gap ligands may be promising materials as host in highly stable organic electrophosphorescent light-emitting diodes.

Key words: organic electrophosphorescence, rare-earth complex, light-emitting diode, T-T annihilation