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The Composition and Growth Mechanism of Iron Nitride Thin Films Deposited by DC Magnetron Sputtering

WANG Xin1,GAO Li-juan1,ZHENG Wei-tao1,XU Yue2   

  1. 1.College of Materials Science and Engineering , Jilin University , Changchun 130023 , China; 2. Measurement and Testing Center , Jilin University , Changchun 130023 , China
  • Received:2002-04-23 Revised:1900-01-01
  • Contact: WANG Xin

Abstract: Iron nitride films were deposited on glass substrate by DC magnetron sputtering with mixed Ar/N2 as discharge (N2 fraction of 5%) and at different time ( 30 min , 20 min , 10 min , and 5 min , respectively ) . The composition of the films was analyzed by means of X-ray photoelectron spectroscopy experiment (XPS) . The layer phases and the surface morphologies of the films were characterized with the aid of grazing incidence X-ray scattering and X-ray diffraction as well as atomic force microscopy . For the film grown at N2 fraction of 5 % , the phase of FeN0.056appeared . The surface of the films showed the selfaffine character . The values of roughness exponent α≈ 0.65 and growth exponent β≈ 0.53 are in agreement with the improvised KPZ exponents based on Kolmogorov's energy cascade concept .

Key words: FexN film, DC magnetron sputtering, growth mechanism

CLC Number: 

  • O482.54