Abstract: We simulated and calculated the radiation damage by proton in CdZnTe. Firstly, the ionization damage and displacement damage for protons in CdZnTe were calculated. Secondly, the number of vacancies generated by protons radiation at different energy and incident angles in CdZnTe were calculated. Finally, sputtering yields generated by protons radiation at different energy and incident angles in CdZnTe target with different thicknesses were calculated. The results show that ionization damage is much greater than displacement damage; the number of vacancies generated by proton radiation in CdZnTe increases with the increase
of proton energy, and the number of vacancies decreases quickly when the incident angles of protons are greater than 60°. CdZnTe is lower than radiation resistance of silicon and diamond semiconductor materials. The sputtering yield is much lower than the number of vacancies in CdZnTe, sputtering yield
increases first and then decreases with the increase of proton energy, and increases with the increase of incident angles of protons. The overall trend of sputtering yield increases with the increase of thickness of CdZnTe target.

Key words: radiation damage, Monte Carlo simulation, proton, sputtering yield