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Formation of CN Bonds in the Amorphous Carbon Film by N-Implantation

LIN Jing-bo, LI Jun-jie, LI Zhe-kui, GU Guang-rui, GAI Tong-xiang, JIN Zhe HU Chao-quan, L Xian-yi, JIN Zeng-sun   

  1. Department of Physics, College of Science and Engineering, Yanbian University, Yanji 133002, Jilin Province, China ; National Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2004-08-27 Revised:1900-01-01 Online:2005-05-26 Published:2005-05-26
  • Contact: LI Jun-jie

Abstract: N-implantation into amorphous carbon films with different doses was carried out to study the formation of CN bonding. Raman and XPS sp ectra were used to characterize the chemical bonding of CN bonds in amorphous carbon films after N-implantation. The results show that N atoms implanted into amorphous carbon films are bound to C atoms by different bonding types of sp3 C-N, sp2 C-N and C≡N in the films. When N-implantation dose increases, the relative content of sp3 C-N bonds increases, which is more than those of other types of C-N bonds in the films. It indicates that N-implantation is favorable to the formation of sp3 C-N bonds.

Key words: N-implantation, amorphous carbon film, magnetron spu

CLC Number: 

  • O484.5