Fe-Si-C体系合成金刚石的生长特性

Abstract

Abstract: By high pressure and high temperature (HPHT) method, the study on introducing Si into diamond synthesis was carried out. Experimental results indicate that owing to the introduction of Si, the color of diamonds from Fe-Si-C system appears to be shallower than that from Fe-C system. And within the same synthetic time, the crystal size of diamonds from Fe-Si-C system is smaller than that from Fe-C system. From X-ray data, we can find that there are two kinds of new compounds, FeSi and Fe₃C, in the Fe-Si-C system.

Key words: silicon, high pressure and high temperature, diamond, crystal size

CLC Number:

TQ164

ZHENG You jin,, MA Hong an, ZHOU Lin, QIN Jie ming, JIA Xiao peng. Growth Characteristics of Synthetic Diamond in Fe-Si-C System[J].J4, 2008, 46(01): 120-122.

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Growth Characteristics of Synthetic Diamond in Fe-Si-C System

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