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In-situ Raman Spectrum of β-Ga2O3 under High Pressure

ZHAO Yan hui1,2, MA Yan mei2, PENG Gang2, CUI Qi liang2   

  1. 1. Department of Physics, Baicheng Normal College, Baicheng 137000, Jilin Province, China;2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2008-06-19 Revised:1900-01-01 Online:2009-05-26 Published:2009-06-23
  • Contact: MA Yan mei

Abstract: In-situ high-pressure Raman study of β-Ga2O3 was carried out from 0 to 23.4 GPa with a diamond anvil cell (DAC). The authors determined the pressure dependences of the Raman bands of β-Ga2O3. The external vibrational modes at 144 cm-1 and 169 cm-1 were assigned according to the high-pressure Raman spectra. Two new Raman peaks at 232 cm-1 and 483 cm-1 are near 18 GPa, and their intensity is strengthened with increasing pressure. So we can determine the occurrence of pressure-induced phase transition near 18 GPa.

Key words: β-Ga2O3, Raman spectrum, high pressure phase transition, diamond anvil cell (DAC)

CLC Number: 

  • O521.2