Journal of Jilin University Science Edition
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ZHANG Lingyun, JIA Ruokun, SUN Xuhui, ZHANG Yingjie, LIU Chunguang
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Abstract:
Nddoped ZnO was prepared by a simple solution method. Xray diffraction analysis (XRD) demonstrates that Nd atoms have been successfully incorporated into the lattice of ZnO. UVVisible absorption spectra (UVVis) show that Nd doping has led to a red shift of the absorption edge of ZnO to the visiblelightregion, which shows Nd doping has narrowed the band gap of ZnO. Nd doping obviously improves the shortcircuit photocurrent density and overall light conversion efficiency of dyesensitized solar cell based on ZnO photoanode. When doping concentrations of Nd were 0.5%,10%, and 1.5% respectively, shortcircuit photocurrent densities were 9.51,13.01,1079 mA/cm2 respectively, and overall light conversion efficiencies were 2.28%,2.84%, and 2.48% respectively.
Key words: solar cell, zinc oxide, Nd doping; bandgap narrowing, photovolatic performance
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ZHANG Lingyun, JIA Ruokun, SUN Xuhui, ZHANG Yingjie, LIU Chunguang. Influence of Nd Doping on Band Gap and PhotovoltaicPerformances of DyeSensitized Solar Cell Based on ZnO[J].Journal of Jilin University Science Edition, 2014, 52(06): 1337-1341.
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http://xuebao.jlu.edu.cn/lxb/EN/Y2014/V52/I06/1337
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