Journal of Jilin University Science Edition

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Influence of Nd Doping on Band Gap and PhotovoltaicPerformances of DyeSensitized Solar Cell Based on ZnO

ZHANG Lingyun, JIA Ruokun, SUN Xuhui, ZHANG Yingjie, LIU Chunguang   

  1. School of Chemical Engineering, Northeast Dianli University, Jilin 132012, Jilin Province, China
  • Received:2014-02-07 Online:2014-11-26 Published:2014-12-11
  • Contact: ZHANG Lingyun E-mail:zhangly@mail.nedu.edu.cn

Abstract:

Nddoped ZnO was prepared by a simple solution method. Xray diffraction analysis (XRD) demonstrates that Nd atoms have been successfully incorporated into the lattice of ZnO. UVVisible absorption spectra (UVVis) show that Nd doping has led to a red shift of the absorption edge of ZnO to
the visiblelightregion, which shows Nd doping has narrowed the band gap of ZnO. Nd doping obviously improves the shortcircuit photocurrent density and overall light conversion efficiency of dyesensitized solar cell based on ZnO photoanode. When doping concentrations of Nd were 0.5%,10%, and 1.5% respectively, shortcircuit photocurrent densities  were 9.51,13.01,1079 mA/cm2 respectively,  and overall light conversion efficiencies  were 2.28%,2.84%, and 2.48% respectively.

Key words: solar cell, zinc oxide, Nd doping; bandgap narrowing, photovolatic performance

CLC Number: 

  • O649.2