Abstract: Based on the dehydrogenation of a-Si∶H and the excimer laser annealing crystallization of a-Si thin films at various laser energy density, poly-silicon samples were obtained and characterized with XRD. According to the p-Si (111) plane characteristic peak intensity, widening information and interplanar distance, the influence of laser power density on the crystallization degree and stress was analyzed in detail. The grain size was estimated according to the Scherrer formula, the better process parameters of laser annealing crystallization p-Si were obtained and the three stages of laser radiation to the thin film material were attested.

Key words: hydrogenated amorphous silicon, dehydrogenation, ex cimer laser annealing crystallization, poly-silicon, X-ray diffraction, full width at half maximum