Abstract:

We used CdSe/ZnS semiconductor nanometerials as lightemitting layers, ZnO as electrontransport layer (ETL), Al and ITO as bipolar  materials. The semiconductor lightemitting diodes (LED) were prepared by spin coating and vacuum evaporation coating technology. We characterized its optical properties. The experimental results show that the device emits yellow light, the peak position is 575 nm, the full width half maximum is 30 nm, the maximum luminous intensity is 2 000 cd/m^2, the luminescence efficiency of device has no obvious decay under higher current density, and semiconductor materials CdSe/ZnS and ZnO are desired materials as lightemitting layer and electron transport layer of LED with high current density and stable emitting.

Key words: semiconductor nanomaterial, electro luminescence, lightemitting diode (LED), display device