Journal of Jilin University Science Edition ›› 2019, Vol. 57 ›› Issue (5): 1246-1254.

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Mechanism of Asp Molecular Damage Induced byHydroxyl Radicals in Water Environment

MA Hongyuan1, JIANG Chunxu2, ZHUANG Yan2, LI Bing3, SUN Yongqing4, YANG Xiaocui1, WANG Zuocheng1   

  1. 1. College of Physics and Electronic Information, Baicheng Normal University, Baicheng 137000, Jilin Province,China; 
    2. College of Computer Science, Baicheng Normal University, Baicheng 137000, Jilin Province, China;
    3. College of Mechanical Engineering, Baicheng Normal University, Baicheng 137000, Jilin Province, China;
    4. Department of Basic, Baicheng Technician Institute, Baicheng 137000, Jilin Province, China
  • Received:2018-09-18 Online:2019-09-26 Published:2019-09-20
  • Contact: YANG Xiaocui E-mail:yxc0622@163.com

Abstract: We studied the aspartic acid (Asp) damage induced by αHatom abstraction of hydroxyl radicals assisted with water molecules in water gas phase and water liquid phase environment by using the dispersion correction density functional WB97XD method, the ab initio MP2 method and the slovation model density (SMD) model method of selfconsistent reaction field theory.  The results show that there are two channels a and b in the damage reaction of Asp. In channel a, hydroxyl radicals water clusters interact with αH and amino nitrogen to form the complexes damage through hydrogen bonding, and in channel b, hydroxyl radicals water clusters interact with αH and carbonyl oxygen to form the complexes damage through hydrogen bonding, this channel is the dominant channel, and the activation energies are -0.7,18.7 kJ/mol in 
water gas phase and water liquid phase environment, respectively. There is one channel in the reaction of Asp damage induced by αHatom abstraction of hydroxyl radicals, and the activation energies are 8.1 and 29.9 kJ/mol in water gas phase and water liquid phase environment, respectively.

Key words: aspartic acid, damage, hydroxyl radical, density functional theory, ab initio, SMD model, activation energy

CLC Number: 

  • O641.12