Journal of Jilin University Science Edition ›› 2020, Vol. 58 ›› Issue (3): 688-691.

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FirstPrinciple Calculations of Silicene Electrode Materials

CAO Miaocong, XU Qiang   

  1. School of Prospecting and Surveying, Changchun Institute of Technology, Changchun 130021, China
  • Received:2019-10-08 Online:2020-05-26 Published:2020-05-20
  • Contact: XU Qiang E-mail:627287881@qq.com

Abstract: The first principle was used to calculate the energy band and electronic density of states of N and S atom codoping, and to study the
 relationship between quantum capacitance and different doping configuration. The results show that the introduction of N/S and N/B codoping atoms can lead to localized state at Fermi level. In the range of -0.6 V to 0.6 V potential, the quantum capacitance of NSS,NS,NBB,NNB and NB doping structures is higher than that of pristine silicene. The quantum capacitance of NSS doping single vacancy silicene is 43.9 μF/cm2 at Fermi level.

Key words: silicene, first principle, band structure, quantum capacitance

CLC Number: 

  • O469