Journal of Jilin University Science Edition ›› 2022, Vol. 60 ›› Issue (2): 445-449.

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Effect of Elements Doping on Electronic Properties of Two-Dimensional Ga2O2

SHAO Li1, TAN Xueqing1, LI Yan1, YE Honggang2   

  1. 1. College of Materials, Zhengzhou University of Aeronautics, Zhengzhou 450015, China;
    2. Department of Applied Physics, Xi’an Jiaotong University, Xi’an 710049, China
  • Received:2021-07-29 Online:2022-03-26 Published:2022-03-26

Abstract:  The VASP (Vienna ab-initio simulation package) software package based on density functional theory was used to calculate the effect 
of five metal and non-metal doping on the crystal structure and electronic properties of two-dimensional Ga2O2. The results show that the doping of B,C,Mg,Si and P can change the crystal structure and electronic properties of Ga2O2. Compared with the intrinsic Ga2O2 crystal, the band gaps of these doping systems are all decrease, which is due to the charge redistribution between the doped atom and the adjacent atom.

Key words: density functional theory (DFT), doping, energy band structure, density of state (DOS)

CLC Number: 

  • TB303