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Electric noise of high-power quantum well semiconductor lasers after annealing

SHI Ying-xue, LI Jing, GUO Shu-xu, ZHANG Su-mei, WANG Xue-dan, SHI Jia-wei   

  1. State Key United Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering,Jilin University, Changchun 130023, China
  • Received:2004-01-05 Revised:1900-01-01 Online:2004-10-26 Published:2004-10-26
  • Contact: SHI Jia-wei

Abstract: The electric noise spectral density of 808 nm high-power quantum well semiconductor laser diode showed a descending trend on aging process, producing annealing effect. In this paper, by inducing the theory of initial defect(It is induced by high temperature and high stress)and non-initial defect, the reason of producing the annealing and forepart failure is discussed.

Key words: semiconductor laser, noise, annealing

CLC Number: 

  • TN365