Abstract: We used femtosecond laser processing technology to improve the optical absorption rate of SiC in the infrared band (especially within the 10.3~12.6 μm range), in order to solve the problem of traditional processing techniques being difficult to finely process and having low absorption rates. We used femtosecond laser direct writing technology to generate specific micro/nanostructures on the surface of SiC by adjusting key parameters of laser processing, and analyzed the surface morphology and optical properties of the processed samples by using scanning electron microscopy and Raman spectrum. The results show that the surface morphology of SiC can be effectively modulated through femtosecond laser processing, and its infrared absorption rate is significantly improved, with a maximum absorption rate of 92%. The nanostructures can reduce the reflectance of materials and enhance the excitation of surface phonon polaritons, thereby enhancing the infrared light absorption capacity of materials.

Key words:  , ultrafast laser, antireflection, Reststrahlen band, Raman spectrum