关键词: 抗辐射加固, 绝缘体上硅, 源漏非对称注入, H型栅, 标准单元

Abstract:

To improve reliability of the electronic devices in space and efficiency of the radiationhardened SOI（Silicon on Insulator） ICs design, a library developing flow is established. The radiation-hardened standard cells library for Synopsys EDA（Electronic Design Automation) tools is designed based on 3.3 V-0.35 μmPD（Partly） SOI CMOS(Complementary Metal-Semiconductor) technology platform. The standard cells are composed of body contacted devices featuring H-gate， asymmetric source and drain to improve the radiation hardening performance. The cells library is validated by EDA tools and measurement. Experiments show that the EDAC(Error Detection And Correction) circuit functions properly with total dose of 300  krad (Si).

Key words: radiationhardened, silicon on insulator（SOI）, asymmetric source and drain, H-gate, standard cell