Abstract: To solve the problem of semiconductor doping concentrations，it is necessary to test the semiconductor in a simple and easy way． Four-probe method is a common method of measuring resistivity in the field of microelectronics technology． Combining the construction of the semiconductor device physics and experiment course，the experiment of testing the doping concentration of semiconductor by four-probe method was developed． Through the establishment of two theoretical models of semi-infinite sample model and infinite thin-layer sample model，the resistivity test methods for semiconductor materials with different thicknesses are studied，and the principle is discussed． In order to solve the problem that the commercial equipment is expensive and can not meet the needs of experimental，the author proposed to build a test system，using a simple manual probe station of tungsten alloy，and designed a four-probe test device according to the experimental needs． The practical application shows that the establishment of the four-probe test system meets the teaching requirements of semiconductor physics experiments．

Key words: four-probe method, resistivity, doping concentration