Abstract: To explore the feasibility of using femtosecond lasers for doping and modification of hBN( hexagonal Boron Nitride), for hBN films growing on sapphire substrates low-pressure chemical vapor deposition is used. The films are then irradiated with femtosecond lasers in an atmospheric environment. X-ray photoelectron spectroscopy results indicate that carbon and oxygen impurities from the atmosphere are incorporated into the hBN. As the laser energy density increased, the contents of carbon and oxygen impurities in hBN monotonically increased. The oxygen and some of the carbon impurities mainly occupy nitrogen vacancies in the hBN, acting as donors and acceptorsing respectively, resulting in impurity compensation. With the increase in carbon concentration, some of the carbon impurities exist in the form of clusters or interstitial atoms. The resistivity of doped hBN samples significantly decreased, reaching up to 1 / 800 of that of undoped samples. These results demonstrate that femtosecond laser technology can be used for doping and controlling the electrical properties of hBN. 

Key words: wide-bandgap semiconductor, hexagonal boron nitride, femtosecond laser, laser processing