Abstract:

A model was built for the calculation of temperature of the insulated grid bipolar transistor(IGBT) using the lumped parameters based on analyzing the heat transfer mechanism in the IGBT. The solution space of the inverse heat transfer problem was discreted by the boundary element method. The inverse heat transfer problem was solved by the conjugated gradient method to get the accurate equivalent thermal resistance and capacitance. The results by the proposed method were compared with the experimental data of the junction temperature of IGBT provided by the manufacturer technical documents as well as with the results by the finite element method, the temperature calculation error is less than 5%.

Key words: electrical engineering, temperature calculation model, inverse heat conduction problem, insulated grid bipolar transistor (IGBT), junction temperature