Abstract:

N-type lead telluride compounds (PbTe) doped with Bi₂Te₃were prepared under 3 GPa and 1200 K by HPHT technology. The electrical resistivity, Seebeck coefficient and thermal conductivity of PbTe doped with Bi₂Te₃ were studied at room temperature. Results show that the figure-of-merit,Z, increases dramatically first, then decreases slowly with the increase in Bi₂Te_3, and the maximum value of Z is 9.3×10-4 K^-1 when mole fraction of PbTe is 1×10^-4 . This value is about 20% higher than that prepared at ambient pressure.

Key words: high energy physics, doping, thermoelectric materials, high-pressure and high-temperature, PbTe, Bi2Te3