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LiSrAlF6晶体Cr3+掺杂中心电子结构的计算

于俊华, 赵卫疆, 苏丽萍   

  1. 哈尔滨工业大学光电子技术研究所, 哈尔滨 150001
  • 收稿日期:2002-01-21 修回日期:1900-01-01 出版日期:2002-04-26 发布日期:2002-04-26
  • 通讯作者: 于俊华

Calculation of Electron Structure of Cr3+Doping Center in LiSrAlF6 Crystal

YU Jun-hua, ZHAO Wei-jiang, SU Li-ping   

  1. Institute of Opto-Electronics, Harbin University of Technology, Ha rbin 150001, China
  • Received:2002-01-21 Revised:1900-01-01 Online:2002-04-26 Published:2002-04-26
  • Contact: YU Jun-hua

摘要: 采用离散变分方法(DVM)计算LiSrAlF6晶体Cr3+掺杂中心电子结构, 主要研究镶嵌势、 团簇大小、 基组类型对计算结果的影响, 给出使计算结果趋于收敛的基本条件.

关键词: 电子结构, DVM方法, 镶嵌势

Abstract: Using discrete variation method(DVM) program, we calculated the electron structure of Cr3+ doping center in the la ser crystal of LiSrAlF6 and studied the effect of inlay potential, cluster size and basis set type on the calculated result. The present paper presents the fundamental cond itions to make the calculated result convergent.

Key words: electron structure, discrete variation method, inlay po tential

中图分类号: 

  • O561.1