并 五 苯 晶 体 薄 膜 的 生 长

并五苯晶体薄膜的生长

张素梅，石家纬，刘建军，刘明大，郭树旭，王伟，赵玲，李靖

吉林大学电子科学与工程学院，集成光电子学国家重点实验室，长春 130023

收稿日期:2002-06-30 修回日期:1900-01-01 出版日期:2002-07-26 发布日期:2002-07-26
通讯作者: 张素梅

Physical Vapor Growth of Pentacene Crystal Thin Films

ZHANG Su-mei, SHI Jia-wei, LIU Jian-jun, LIU Ming-da,GUO Shu-xu, WANG Wei, ZHAO Ling, LI Jing

College of Electronics and Engineering, Nation Integrated Opto-electronics Key Laboratory, Jilin University, Changchun 130023, China

Received:2002-06-30 Revised:1900-01-01 Online:2002-07-26 Published:2002-07-26
Contact: ZHANG Su-mei

摘要/Abstract

摘要： 用物理气相沉积法在水平系统中生长有机半导体并五苯晶体薄膜. 用10～30 mg的源生长出20～30 mm²大小的适合特性测量和器件制备的晶体薄膜. 利用TEM， SEM和X光透射电镜等仪器对并五苯晶体薄膜进行了测试分析.

关键词: 物理气相沉积, 晶体薄膜, 并五苯

Abstract: Physical vapor deposition in horizontal systems has been used for the growth of crystal thin-film of organic semiconductor pentacene. By using 10~30 mg starting material, 20~30 mm² sized crystals thi n-film, sui table for the characterization measurements of the device fabricated, has been g rown. And we have analyzed the thin-film of pentacene crystal by using TEM， X -ray diffraction and scanning electron microscopy.

Key words: physical vapor deposition, crystal thin-film, pentacen

中图分类号:

O484.1

张素梅，石家纬，刘建军，刘明大，郭树旭，王伟，赵玲，李靖. 并五苯晶体薄膜的生长[J]. J4, 2002, 40(03): 288-289.

ZHANG Su-mei, SHI Jia-wei, LIU Jian-jun, LIU Ming-da,GUO Shu-xu, WANG Wei, ZHAO Ling, LI Jing. Physical Vapor Growth of Pentacene Crystal Thin Films[J]. J4, 2002, 40(03): 288-289.