氮化硼薄膜的厚度对场发射特性的影响

氮化硼薄膜的厚度对场发射特性的影响

顾广瑞^1,2, 李英爱¹, 刘艳梅³, 陶艳春⁴ , 何志¹, 殷红¹, 李卫青¹, 冯伟¹, 白玉白³, 田野⁵, 赵永年^1,4

1. 吉林大学超硬材料国家重点实验室, 长春 130012; 2. 延边大学理工学院物理系, 延吉 133002;3. 吉林大学化学学院, 长春 130023; 4. 吉林大学超分子结构和谱学开放实验室, 长春 130023; 5. 吉林省科学技术厅，长春 130042

收稿日期:2002-07-04 修回日期:1900-01-01 出版日期:2003-07-26 发布日期:2003-07-26
通讯作者: 赵永年

Effect of Thickness of Thin BN Films on Field Emission Characteristics

GU Guang-rui^1,2, LI Ying-ai¹, LIU Yan-mei³ , TAO Yan-chun⁴, HE Zhi¹, YIN Hong¹,LI Wei-qing¹, FENG Wei¹, BAI Yu-bai³, TIAN Ye⁵, ZHAO Yong-nian^1,4

1. National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;2. Department of Physics, College of Science and Engineering, Yanbian University, Yanji 133002, China;3. College of Chemistry, Jilin University, Changchun 130023, China;4. Key Laboratory for Supermolecular Structure and Spectroscopy, Jilin University, Changchun 130023, China；5. Department of Science & Technology of Jilin Province, Changchun 130042, China

Received:2002-07-04 Revised:1900-01-01 Online:2003-07-26 Published:2003-07-26
Contact: ZHAO Yong-nian

摘要/Abstract

摘要： 利用射频磁控溅射方法, 在n型（100）Si基底上沉积了不同厚度（54~124 nm）的纳米氮化硼（BN）薄膜. 红外光谱分析表明, BN薄膜结构为六角BN（h-BN）相(1 380 cm^-1和780 cm^-1)结构. 在超高真空系统中测量了不同膜厚的场发射特性, 发现阈值电压随着厚度的增加而增大. 厚度为54 nm的BN薄膜样品阈值电场为10 V/μm, 当外加电场为23 V/μm时, 最高发射电流为240 μA/cm². BN薄膜场发射F-N曲线表明, 在外加电场作用下, 电子隧穿了BN薄膜表面势垒发射到真空.

关键词: 氮化硼薄膜, 场发射, 厚度

Abstract: Nanometer boron nitride(BN) thin films with various thickness(54~124 nm) were fixed on the (100)-oriented surface of n-Si(ρ=0.0 08~0.02 Ω·m) by r.f. magnetic sputtering physical vapor deposition(PVD). There are only two absorption peaks of the hexagonal-BN(h-BN) at about 1 380 cm^-1 and 780 cm^-1 in the FTIR spectra of the BN thin films. The field emission characteristics of the thin BN films were measured in a super hi gh vacuum system. It was found that the field emission characteristics of the th in BN films depend evidently on the thickness of the films. A turn-on electric f ield as low as 10 V/μm is obtained for the ～54 nm-thick BN film, and the emiss ion current density is estimated to be higher 240 μA/cm² at an electric field of 23 V/μm. It is shown by F-N curves that the electrons emitted fr om BN penetrate through the potential barrier at the surface of the BN thin film to vacuum tunneling under the exterior electric field action.

Key words: BN thin film, field emission, thickness

中图分类号:

TN873.95

顾广瑞, 李英爱, 刘艳梅, 陶艳春 , 何志, 殷红, 李卫青, 冯伟, 白玉白, 田野, 赵永年. 氮化硼薄膜的厚度对场发射特性的影响[J]. J4, 2003, 41(03): 352-355.

GU Guang-rui, LI Ying-ai, LIU Yan-mei , TAO Yan-chun, HE Zhi, YIN Hong,LI Wei-qing, FENG Wei, BAI Yu-bai, TIAN Ye, ZHAO Yong-nian. Effect of Thickness of Thin BN Films on Field Emission Characteristics[J]. J4, 2003, 41(03): 352-355.

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