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化学沉积法制备CdS纳米薄膜及成膜机理

周向东1, 李子亨12, 李志有1   

  1. 1. 吉林大学 物理学院, 长春 130021; 2. 吉林大学 超硬材料国家重点实验室, 长春 130012
  • 收稿日期:2006-04-27 修回日期:1900-01-01 出版日期:2007-01-26 发布日期:2007-01-26
  • 通讯作者: 李子亨

Preparation and Formation Mechanism of CdS Nanofilms via Chemical Bath Deposition Technique

ZHOU Xiangdong1, LI Ziheng1,2, LI Zhiyou1   

  1. 1. College of Physics, Jilin University, Changchun 130021, China; 2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2006-04-27 Revised:1900-01-01 Online:2007-01-26 Published:2007-01-26
  • Contact: LI Ziheng

摘要: 分别以Cd(NO3)2和(NH2)2CS作为镉源和硫源, 用化学沉积法(CBD)在ITO玻璃上生长CdS半导体纳米薄膜. 考察了Cd2+浓度、 沉积温度、 沉积时间和后处理温度对CdS成膜的影响. 紫外可见吸收谱和原子力显微镜结果表明, 改变溶液浓度和后处理温度都能有效调节CdS的吸收带边, 得到均一致密的CdS纳米薄膜. 探讨了膜形成机理, 给出了成核过程模型, 进一步修正了传统成膜机制. 认为ITO玻璃基片表面活性位和晶核的形成是均一致密CdS纳米膜形成的关键. 晶核的形成是电学、 热学、 力学和化学等因素共同作用的结果.

关键词: CdS纳米薄膜, 化学沉积, 均一致密, 活性位, 晶核

Abstract: CdS semiconductor nanofilms were grown on ITO glass substrates by means of chemical bath deposition (CBD) technique with Cd(NO3)2 as the Cd ions and (NH2)2CS as the S ions source. The concentration of Cd ions, deposition time and posttreatment temperature have impact on CdS nanofilms formation.UVVis absorption spectrum and Atomic Force Microscope (AFM) image indicate that the change of concen tration of Cd ions and posttreatment temperature may adjust the bandgap of CdS to obtain stable uniform and compact hard films. Formation mechanism of the crystal nucleus and CdS film was also discussed. Active sites on the surface of ITO are critical to the formation of crystal nucleus and uniform compact CdS nanofilm. The active site and crystal nucleus are formed due to the comprehensive effect of electricity, thermodynamics and chemistry.

Key words: CdS nanofilm, chemicl bath deposition, uniform compact, active site, crystal nucleus

中图分类号: 

  • O649.4