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γ′-Fe4N纳米晶薄膜的结构及低温磁性

王丽丽1,2, 赵利军2, 姜伟棣3, 朱 莉2, 宫 杰2, 郑伟涛1   

  1. 1. 吉林大学 材料科学与工程学院, 长春 130012; 2. 长春大学 理学院, 长春 130022; 3. 中国计量学院 物理系, 杭州 310018
  • 收稿日期:2008-03-15 修回日期:1900-01-01 出版日期:2009-03-26 发布日期:2009-03-26
  • 通讯作者: 郑伟涛

Structure of Nanocrystalline γ′-Fe4N Thin Films and Their Magnetic Properties at Low Temperatures

WANG Li li1,2, ZHAO Li jun2, JIANG Wei di3, ZHU Li2, GONG Jie2, ZHENG Wei tao1   

  1. 1. College of Materials Science and Engineering, Jilin University, Changchun 130012, China; 2. College of Science, Changchun University, Changchun 130022, China;3. Department of Physics, China Jiliang University, Hangzhou 310018, China
  • Received:2008-03-15 Revised:1900-01-01 Online:2009-03-26 Published:2009-03-26
  • Contact: ZHENG Wei tao

摘要: 采用直流磁控溅射方法, 在Si(100)单晶衬底上制备γ′-Fe4N纳米晶薄膜样品, 并利用X射线衍射(XRD)和振动样品磁强计(VSM)对样品的结构和磁性进行测试分析, 给出了比饱和磁化强度及矫顽力与温度的关系. 结果表明, 样品沿(111)晶面择优生长, 具有单一的易磁化方向, 且易磁化方向平行于(111)晶面. 随着测量温度的降低, γ′-Fe4N纳米晶薄膜样品的比饱和磁化强度σs增加, 矫顽力Hc增大, 剩磁比σrs减小. 通过理论拟合确定了比饱和磁化强度与矫顽力随温度的变化关系, 矫顽力随温度的变化满足T1/2规律, 比饱和磁化强度σs与温度不满足Bloch的T3/2规律, 表明在80~350 K温度范围内自旋波之间存在较强的相互作用. 

关键词: γ′-Fe4N纳米晶薄膜, 结构, 低温, 磁性

Abstract: Nanocrystalline γ′-Fe4Nthin films were synthesized on single crystal Si (100) substrate by facing target magnetron sputtering. The structure and magnetic properties at room temperature and low temperatures were characterized by means of X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). The results indicate that the film had a single easy magnetized direction along (111). In a temperature range of 80~350 K, the saturation magnetization σs and coercive force Hc increased, whereas the ratio σrsdecreased with decreasing measured temperature. The relation between the coercive force Hc and temperature T obeyed the T1/2 law, the relation between σs and T did not obey the Bloch T3/2 law, which means that the interaction among spin waves should be considered. 

Key words: nanocrystalline γ′-Fe4N thin film, structure, low temperature, magnetic properties

中图分类号: 

  • O484.1