吉林大学学报(理学版)

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离子液体中硅锗膜共沉积过程的反应特性

于兆亮1, 李忠跃1, 李维岩1, 李季1, 孟祥东1,2, 李海波1   

  1. 1. 吉林师范大学 材料物理与化学教育部重点实验室, 吉林 四平 136000; 2. 吉林大学 无机合成与制备化学国家重点实验室, 长春 130012
  • 收稿日期:2013-12-30 出版日期:2014-09-26 发布日期:2014-09-26
  • 通讯作者: 李海波 E-mail:lihaibo@jlnu.edu.cn

Reaction Properties of SiGe FilmCodeposition Process in Ionic Liquid

YU Zhaoliang1, LI Zhongyue1, LI Weiyan1, LI Ji1, MENG Xiangdong1,2, LI Haibo1   

  1. 1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, Jilin Province, China; 2. State Key Laboratory ofInorganic Synthesis and Preparative Chemistry, Jilin University, Changchun 130012, China
  • Received:2013-12-30 Online:2014-09-26 Published:2014-09-26
  • Contact: LI Haibo E-mail:lihaibo@jlnu.edu.cn

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摘要：

采用电沉积法, 在［EMIm］Tf2N离子液体中选取恒电位制备SiGe膜. 为考察SiGe在工作电极表面的反应特性, 在［EMIm］Tf2N离子液体中测试不同扫描速率下的循环伏安（CV）曲线, 并利用扫描电镜和能谱分析研究SiGe膜的表面形貌和组分. 结果表明, ［EMIm］Tf2N离子液体中SiGe的共沉积是受扩散控制的非可逆电极过程; 在该离子液体中, SiGe共沉积的平均阴极传递系数α=0.175, 扩散系数D0=6.64×10-7m/s.

关键词: 离子液体, 硅锗, 共沉积, 扫描速率, 循环伏安

Abstract:

A SiGe film was electrodeposited in ［EMIm］Tf2N ionic liquid. In order to study the reaction process of SiGe on electrode surface, cyclic voltammetry curves at different scan rates were determined. The microstructure and composition of the SiGe film were characterized by scanning electron microscopy and energy dispersive spectroscopy. An irreversible process of the codeposition of SiGe was controlled by diffusion in ［EMIm］Tf2N ionic liquid. The
 cathodal transfer coefficient (α=0.175) and diffusion coefficient (D0=6.64×10-7 m/s) of an electrode reaction process of SiGe codeposition were calculated based on the cyclic voltmmetric curve.

Key words: ionic liquid, SiGe, codeposition, scan rate, cyclic voltammetry

中图分类号: 

  • O469
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