微量Ni掺杂对铜锌锡硫硒薄膜电学性能的影响

吉林大学学报(理学版) ›› 2026, Vol. 64 ›› Issue (3): 684-0690.

微量Ni掺杂对铜锌锡硫硒薄膜电学性能的影响

何小龙^1,2, 米亚金², 白露露², 杨艳春²

1. 华北电力大学新能源学院, 北京 102206； 2. 内蒙古师范大学物理与电子信息学院, 呼和浩特 010020

收稿日期:2024-12-13 出版日期:2026-05-26 发布日期:2026-05-26
通讯作者: 杨艳春 E-mail:20170020@imnu.edu.cn

Effect of Trace Ni-Doping on Electrical Properties of Cu₂ZnSn(S,Se)₄ Thin Films

HE Xiaolong^1,2, MI Yajin², BAI Lulu², YANG Yanchun²

1. College of New Energy, North China Electric Power University, Beijing 102206, China;
2. School of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010020, China

Received:2024-12-13 Online:2026-05-26 Published:2026-05-26

摘要/Abstract

摘要： 为研究微量Ni掺杂对铜锌锡硫硒(Cu₂ZnSn(S,Se)₄)薄膜的结晶性、缺陷浓度和电学性能的影响, 在不影响其他阳离子（铜、锌和锡）的前提下, 引入微量Ni离子进入铜锌锡硫前驱体溶液中, 经旋涂—烧结—硒化的制备流程, 得到Ni掺杂的铜锌锡硫硒薄膜, 并利用X射线衍射、 Raman光谱仪、 X射线光电子能谱、电感耦合等离子体光学发射光谱、扫描电子显微镜、紫外-可见分光光度计、 Hall效应和导电原子力显微镜对其进行测试分析. 结果表明, 当Ni掺杂百分数为0.5%时, 薄膜的结晶度最佳, 不良缺陷Sn_Zn缺陷浓度降到最低
, 载流子浓度为3.58×10¹⁶ cm^-3, 平均表面电流为4.67 nA, 薄膜的电学性能达到最佳.

关键词: 铜锌锡硫硒薄膜, Ni掺杂, 缺陷浓度, 电学性能

Abstract: In order to study the effect of trace Ni-doping on the crystallinity, defect concentration and electrical properties of Cu₂ZnSn(S,Se)₄ thin films, without affecting other cations (Cu,Zn and Sn), we introduced trace Ni ions into the Cu₂ZnSnS₄ precursor solution, and prepared the Ni-doped Cu₂ZnSn(S,Se)₄ films through a spin-coating, sintering and selenization process. We conducted testing and analysis by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, inductively coupled plasma optical emission spectrometry, scanning electron microscopy, UV-Vis spectrophotometry, Hall effect and conductive atomic force microscopy. The results show that when the Ni-doping percentage is 0.5%，the film achieves optimal crystallinity and the concentration of deleterious Sn_Zn defect is minimized. The carrier concentration is 3.58×10¹⁶ cm^-3, the average surface current is 4.67 nA, and the electrical properties of the film reach its optimum.

Key words: Cu₂ZnSn(S,Se)₄ thin film, Ni-doping, defect concentration, electrical property

中图分类号:

O484.4

何小龙, 米亚金, 白露露, 杨艳春. 微量Ni掺杂对铜锌锡硫硒薄膜电学性能的影响[J]. 吉林大学学报(理学版), 2026, 64(3): 684-0690.

HE Xiaolong, MI Yajin, BAI Lulu, YANG Yanchun. Effect of Trace Ni-Doping on Electrical Properties of Cu₂ZnSn(S,Se)₄ Thin Films[J]. Journal of Jilin University Science Edition, 2026, 64(3): 684-0690.