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用蒙特卡罗方法计算X射线在酞菁铜与重金属界面的剂量增强系数

赵宝奎, 赵广义, 周银行, 马玉刚, 董文斌   

  1. 吉林大学 物理学院, 长春 130021
  • 收稿日期:2006-07-06 修回日期:1900-01-01 出版日期:2007-05-26 发布日期:2007-05-26
  • 通讯作者: 赵广义

Monte-Carlo Calculation of X-Ray Dose-enhancement-factor Nearby Copper-phthalocyanine Connected High ZMetal Interface

ZHAO Bao kui, ZHAO Guang yi, ZHOU Yin hang, MA Yu gang, DONG Wen bin   

  1. College of Physics, Jilin University, Changchun 130021, China
  • Received:2006-07-06 Revised:1900-01-01 Online:2007-05-26 Published:2007-05-26
  • Contact: ZHAO Guang yi

摘要: 用蒙特卡罗方法计算金-酞菁铜、 钨-酞菁铜和钽-酞菁铜界面的剂量增强系数. 结果表明, 当X射线能量为100~150 keV时, 界面附近酞菁铜一侧存在较大的剂量增强. 

关键词: 有机半导体, X射线, 剂量增强系数, 界面

Abstract: The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials. The dose-enhancement-factors of Au-CuPci,W-CuPc and Ta-CuPc interfaces were calculated via the Monte-Carlo method. The calculated results demonstrate that there exists stronger dose-enhancement on the CuPc side near the interface when the energy of X-ray is between 100 keV and 150 keV.

Key words: organic semiconductor, X-ray, dose-enhancement-factor, interface

中图分类号: 

  • O434.1