Poly-Si TFT有源驱动OLED单元像素电路的参数设计

Poly-Si TFT有源驱动OLED单元像素电路的参数设计

王丽杰¹，张彤^1,2, 刘式墉¹

1. 集成光电子国家重点实验室吉林大学实验区, 长春 130023;2. 中国科学院长春光学精密机械与物理研究所，长春 130033

收稿日期:2004-06-30 修回日期:1900-01-01 出版日期:2005-05-26 发布日期:2005-05-26
通讯作者: 张彤

Parameters Design of Pixel Circuit for OLED Active Matrix Driving Array Based on Poly-Si TFT

WANG Li-jie¹, ZHANG Tong^1,2, LIU Shi-yong¹

1. State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, China;2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China

Received:2004-06-30 Revised:1900-01-01 Online:2005-05-26 Published:2005-05-26
Contact: ZHANG Tong

摘要/Abstract

摘要： 根据有机电致发光显示器件(OLED)的发光特性及多晶硅薄膜晶体管 (Poly-Si TFT)的工作特性, 对Poly-Si TFT有源驱动OLED的源极跟随型双管单元像素驱动电路进行了理论计算和模拟仿真, 确定了单元像素中的各种器件参数; 通过AI M-Spice的模拟仿真了整个像素电路工作状态, 对器件参数进行了优化.

关键词: 多晶硅, 薄膜晶体管, 有机电致发光, 有源驱动, 仿真模拟

Abstract: Basis on the characters of the OLED and poly-Si TFT, the values of the device parameters in the poly-Si TFT AM-OLED pixel circuit w ere determined by means of calculation and simulation. The pixel circuit was sim ulated with the software aim-spice, and the values of the device parameters wer e optimized.

Key words: poly silicon, thin film transistor, organic light emit

中图分类号:

TN27

王丽杰，张彤, 刘式墉. Poly-Si TFT有源驱动OLED单元像素电路的参数设计[J]. J4, 2005, 43(03): 338-342.

WANG Li-jie, ZHANG Tong, LIU Shi-yong. Parameters Design of Pixel Circuit for OLED Active Matrix Driving Array Based on Poly-Si TFT[J]. J4, 2005, 43(03): 338-342.

[1]	姚冠新, 韩强, 姜文龙, 王艳玲, 王福军, 王冬梅. 基于N-BDAVBi的非掺杂高效蓝色OLEDs[J]. J4, 2011, 49(04): 760-763.
[2]	廖燕平, 黄金英, 郜峰利,4, 邵喜斌, 付国柱, 荆海，缪国庆. 激光晶化多晶硅的制备与XRD谱[J]. J4, 2004, 42(01): 99-102.