基底温度对氮化硼薄膜场发射特性的影响

基底温度对氮化硼薄膜场发射特性的影响

孙文斗^1,2，顾广瑞^１，孙龙^１, 李全军^１，李哲奎^１，盖同祥^１，赵永年³

1. 延边大学理工学院物理系，延吉 133002; 2. 延边广播电视大学，延吉 133001;3. 吉林大学超硬材料国家重点实验室，长春 130012

收稿日期:2003-10-30 修回日期:1900-01-01 出版日期:2004-04-26 发布日期:2004-04-26
通讯作者: 顾广瑞

Influence of substrates temperature on field emission characteristics of BN thin films

SUN Wen-dou^1,2, GU Guang-rui¹, SUN Long¹, LI Q uan-jun¹,LI Zhe-kui¹, GAI Tong-xiang¹, ZHAO Yong-nian³

1. Department of Physics, College of Science and Engineering, Yanbia n University, Yanji 133002, China；2. Yanbian Radio and TV University, Yanji 133001, China; 3. National Laboratory for Superhard Materials, Jilin University, Changchun 130023, China

Received:2003-10-30 Revised:1900-01-01 Online:2004-04-26 Published:2004-04-26
Contact: GU Guang-rui

摘要/Abstract

摘要： 利用射频磁控溅射方法，真空室中充入高纯N_{2(99.99%)和高纯Ar（99.99%）的混合气体，在n型（100）Si基底上沉积了六角氮化硼（h-BN）薄膜. 在超高真空（<10^-7 Pa）系统中测量了BN薄膜的场发射特性，发现沉积时基底温度对BN薄膜的场发射特性有很大影响. 基底温度为500 ℃时沉积的BN薄膜样品场发射特性要好于其他薄膜，阈值电场为12 V/μm，电场升到34 V/μm，场发射电流为280 μA/cm². 所有样品的Fowler-Nordheim(F-N)曲线均近似为直线，表明电子是通过隧道效应穿透BN薄膜发射到真空的.}

关键词: BN薄膜, 场发射, 基底温度, 表面粗糙度

Abstract: H-BN thin films were prepared on the (100)-oriented surface of n-Si by r.f. sputtering physical vapor deposition(PVD). The field emi ssion characteristics of the BN films were measured in a ultra high vacuum syste m. It has been found that the field emission characteristics of BN films is affe cted evidently by substrates temperature. A turn-on electric field as low as 12 V/μm is obtained and the highest emission current density is 280 μA/cm^{2< /sup> fo r the BN film deposited at a substrate temperature of 500 ℃. The Fowler-Nordhei m(F-N) curves are all nearly straight lines that indicate the electrons are emi tted from n-Si to penetrate the BN films to vacuum tunneling by means of tunnel ing effect.}

Key words: BN films, field emission, substrate temperature, sur face roughness

中图分类号:

TN873.95

孙文斗，顾广瑞，孙龙, 李全军，李哲奎，盖同祥，赵永年. 基底温度对氮化硼薄膜场发射特性的影响[J]. J4, 2004, 42(02): 251-254.

SUN Wen-dou, GU Guang-rui, SUN Long, LI Q uan-jun,LI Zhe-kui, GAI Tong-xiang, ZHAO Yong-nian. Influence of substrates temperature on field emission characteristics of BN thin films[J]. J4, 2004, 42(02): 251-254.

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