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衬底偏压对γ′-Fe4N薄膜磁性的影响

赵利军1, 王丽丽1, 宫 杰1, 郑伟涛2   

  1. 1. 长春大学 理学院, 长春 130022; 2. 吉林大学 材料科学与工程学院, 长春 130012
  • 收稿日期:2007-09-20 修回日期:1900-01-01 出版日期:2008-09-26 发布日期:2008-09-26
  • 通讯作者: 郑伟涛

Effect of Substrate Bias Voltage on Magnetic Properties of γ′-Fe4N Thin Films

ZHAO Li jun1, WANG Li li1, GONG Jie1, ZHENG Wei tao2   

  1. 1. College of Science, Changchun University, Changchun 130022, China; 2. College of Materials Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2007-09-20 Revised:1900-01-01 Online:2008-09-26 Published:2008-09-26
  • Contact: ZHENG Wei tao

摘要: 采用直流磁控溅射方法, 以Ar/N2(N2/(Ar+N2)=10%)为放电气体, 在Si(100)单晶衬底上获得了γ′-Fe4N薄膜样品. 利用X射线衍射(XRD)和振动样品磁强计(VSM)研究衬底偏压对γ′-Fe4N薄膜样品的影响. 结果表明, 随着衬底负偏压的增大, γ′-Fe4N薄膜样品的晶胞参数减小, Fe和N的化合效率与样品的致密度提高, 表面缺陷减少, 矫顽力降低. 

关键词: γ′-Fe4N薄膜, 衬底偏压, 磁性

Abstract: γ′-Fe4N thin films were deposited on single crystal Si (100) substrate by DC magnetron sputtering using an Ar/N2 gas mixture (N2/(Ar+N2)=10%). The structure and magnetic properties of the films were characterized via Xray diffraction (XRD) and superconducting quantum interference device (SQUID). The effect of substrate bias voltage on magnetic properties of γ′-Fe4N thin films were investigated. With the increase of substrate bias voltage, the efficiency of the reaction between Fe and N and the growth rate for γ′-Fe4N were improved, the films obtained were smooth, and the values of Ms for all the FeN films were almost the same, but their coercivity was decreased.

Key words: γ′-Fe4N thin film, substrate bias voltage, magnetic property

中图分类号: 

  • O484.1