J4 ›› 2010, Vol. 07 ›› Issue (4): 667-671.

• 物理 • 上一篇    下一篇

用RF磁控溅射法制备锂氮共掺p型氧化锌

刘力1,2, 郭秀芝1,2, 赵婷婷1,2   

  1. 1. 北华大学 物理学院, 吉林 吉林132013|2. 吉林大学 物理学院, 长春 130012
  • 收稿日期:2009-10-26 出版日期:2010-07-26 发布日期:2011-06-14
  • 通讯作者: 刘力 E-mail:liuli62@sina.com

p-Type Li-N Dual Doped ZnO Prepared by RF Magnetron Sputtering

LIU Li1,2, GUO Xiu zhi1,2, ZHAO Ting ting1,2   

  1. 1. College of Physics, Beihua University, Jilin 132013, Jilin Province, China;2. College of Physics, Jilin University, Changchun 130012, China
  • Received:2009-10-26 Online:2010-07-26 Published:2011-06-14
  • Contact: LIU Li E-mail:liuli62@sina.com

摘要:

采用RF磁控溅射技术, 以掺杂氮化锂的氧化锌陶瓷为靶材, 用不同物质的量比的高纯氩气和氧气混合气体为溅射气体, 在石英衬底上生长锂氮共掺氧化锌薄膜, 并在600 ℃真空热退火30 min, 研究生长气氛对锂氮共掺氧化锌导电类型、 晶体结构与低温光致发光的影响规律和机制. 结果表明, 当以n(氩气)∶n(氧气)=60的混合气体为溅射气体时, 可得到稳定的p型锂氮共掺氧化锌薄膜. X射线衍射谱表明, 样品具有高度的c轴择优取向. 由变温光致发光分析可知, 该薄膜的p型导电来源于LiZn受主缺陷, 其光学受主能级位于价带顶131.6 meV处.

关键词: RF磁控溅射, 锂氮共掺, 氧化锌, 半导体

Abstract:

The Li\|N dual doped ZnO (ZnO∶(Li,N)) thin films prepared on quartz substrates by means of RF magnetron sputtering with Li3N as dopant source and Ar/O2 with diffetent molar ratio  as sputtering gas. The as\|grown films were annealed in vacuum for 30 min at 600 ℃. The results show when n(Ar)∶n(O2)=60, the stable p\|type ZnO∶(Li,N) thin film was obtained. XRD result shows that the film exhibits high preferential orientation in c\|axis direction. The p\|type conductivity results from the defect of substitutional Zn at O site (LiZn) via the analysis of temperature\|dependent PL,  and the optical acceptor level of the  LiZn  was calculated to be 131.6 meV  above the valence band maximum. The effects of the growth ambience on conductivity type, crystal structure and low temperature PL were studied.

Key words: RF magnetron sputtering, Li-N dual doped, zinc oxide, semiconductor

中图分类号: 

  • O493