6H-SiC衬底上InN单晶薄膜的RF-MBE生长

J4 ›› 2012, Vol. 50 ›› Issue (06): 1247-1251.

6H-SiC衬底上InN单晶薄膜的RF-MBE生长

沈春生, 吴国光, 高福斌, 马艳, 杜国同, 李万程

吉林大学电子科学与工程学院, |集成光电子学国家重点联合实验室, 长春 130012

收稿日期:2011-10-27 出版日期:2012-11-26 发布日期:2012-11-26
通讯作者: 李万程 E-mail:liwc@mail.jlu.edu.cn

InN Films Grown on 6H\|SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

SHEN Chun |sheng, WU Guo guang, GAO Fu bin, MA Yan, DU Guo tong, LI Wan cheng

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2011-10-27 Online:2012-11-26 Published:2012-11-26
Contact: LI Wan cheng E-mail:liwc@mail.jlu.edu.cn

摘要/Abstract

摘要：

采用射频等离子体辅助分子束外延(RF\|MBE)方法在6H\|SiC衬底上制备纤锌矿结构的氮化铟（InN）薄膜. 利用原位X射线光电子能谱测试确定了InN的修正俄歇参数α′=852.76 eV和Wagner图, InN的铟氮质量比为1.19; 扫描电子显微镜和原子力显微镜测试表明, 外延InN为网状结构, 表面无铟滴; X射线衍射测试表明, 薄膜为单一c轴择优取向生长, 其摇摆曲线半高宽为32.6 弧分; 室温光致发光峰中心位于1 575 nm处. 

关键词: 分子束外延, 氮化铟, 碳化硅, 光电子能谱, X射线衍射, 光致发光

Abstract:

The growth of wurtzite indium nitride (InN) films was investigated by means of radio\|frequency plasma-assisted molecular beam epitaxy (RF\|MBE) on 6H\|SiC substrates. In\|situ X-ray photoelectron spectra were used to determine the Wagner plot of InN. The auger parameter α′ is 85276 eV. The mass radio of In to N in InN is 1.19; the sample surface of InN/6H\|SiC, observed by an scanning electron microscope and atomic force microscope, is reticular structure without indium droplets; X-ray diffraction results show that the films have a preferential c-axis orientation normal to the substrate surface, FWHM of InN (0002) rocking curve is 326 arcmin; and the room temperature photoluminescence peak is at about 1 575 nm.

Key words: molecular beam epitaxy, InN, 6H-SiC, photoelectron spectra, X-ray diffraction, photoluminescence

中图分类号:

TB332

沈春生, 吴国光, 高福斌, 马艳, 杜国同, 李万程. 6H-SiC衬底上InN单晶薄膜的RF-MBE生长[J]. J4, 2012, 50(06): 1247-1251.

CHEN Chun-Sheng, TUN Guo-Guang, GAO Fu-Bin, MA Yan, DU Guo-Tong, LI Mo-Cheng. InN Films Grown on 6H\|SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. J4, 2012, 50(06): 1247-1251.

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