吉林大学学报(理学版) ›› 2022, Vol. 60 ›› Issue (1): 163-0166.

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Ti3C2电极材料的密度泛函理论计算

司雪1, 李卓1, 王思奇1, 杨鑫林1, 佘维汉1, 徐强2, 杨光敏1   

  1. 1. 长春师范大学 物理学院, 长春 130032; 2. 长春工程学院 勘查与测绘学院, 长春 130012
  • 收稿日期:2021-07-09 出版日期:2022-01-26 发布日期:2022-01-26
  • 通讯作者: 杨光敏 E-mail:249138087@qq.com

Density Functional Theory Calculations of Ti3C2 Electrode Material

SI Xue1, LI Zhuo1, WANG Siqi1, YANG Xinlin1, SHE Weihan1, XU Qiang2, YANG Guangmin1   

  1. 1. College of Physics, Changchun Normal University, Changchun 130032, China; 
    2. College of Prospecting and Surveying, Changchun Institute of Technology, Changchun 130012, China
  • Received:2021-07-09 Online:2022-01-26 Published:2022-01-26

摘要: 研究H—,—O—,F—三种基团在Ti3C2表面的吸附, 通过密度泛函理论模拟计算吸附后结构的电子性质和量子电容. 结果表明: 3个相邻C原子中心处的正上方是最佳吸附位; 基团吸附可调制Ti3C2的电子结构; Ti3C2表面吸附H—基团的量子电容提升效果最好, 且在负偏压下具有较高的电荷积累能力.

关键词: 电子结构, 量子电容, 密度泛函理论

Abstract: We studied the adsorption of three groups of H,O and F on the surface of Ti3C2, the electronic properties and quantum capacita
nce of the adsorbed structure were calculated by density functional theory simulation. The results show that the best adsorption
 site is directly above the center of three adjacent carbon atoms, the electronic structure of Ti3C2 can be modulated by the adsorption of the groups. The quantum capacitance enhancement effect of adsorbing H group on Ti3C2 surface is the best, and it has higher charge accumulation ability under negative bias voltage.

Key words: electronic structure, quantum capacitance, density functional theory

中图分类号: 

  • TB303