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Influence of Interface Electrons Transfer on Conductivity of Nanometer TiO2 Thin Films

GU Guang-rui1,2, HE Zhi1, LI Ying-ai1, ZHANG Chong-cai3,LI Wei-qing1, YIN Hong1, ZHAO Yong-nian1   

  1. 1. National Laboratory of Superhard Materials, Jilin University, Changchun 130023, China;2. College of Science and Engineering, Yanbian University, Yanji 133002, China;3. Sichuan University of Science and Technology, Chengdu 610039, China
  • Received:2001-09-03 Revised:1900-01-01 Online:2002-07-26 Published:2002-07-26
  • Contact: GU Guang-rui

Abstract: The present paper presents the dependence of the conduc tivity of TiO2 thin films on the different substrates and on the thick ness of the films. It was found that the resistivity of the TiO2 thin films de posited on Ti and Si substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on diff erent substarte materials is different and the films deposited on glass are nonc onductors. This is attributed to interface electrons transfer, and the conducting layer thickness is determined by the work function difference between substrates and thin films.

Key words: nanometer TiO2 thin films, conductivity, transfer of electrons

CLC Number: 

  • O647.2