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Controlling Interface State to Lower Electric Noise and Surface Movable Charge

SHI Ying-xue, LI Jing, GUO Shu-xu, ZHANG Su-mei, WANG Xue-dan, SHI Jia-wei   

  1. State Key United Laboratory on Integrated Optoelectronics, Jilin University Region, Changchun 130012, China
  • Received:2004-01-05 Revised:1900-01-01 Online:2005-01-26 Published:2005-01-20
  • Contact: SHI Jia-wei

Abstract: The paper contrasted CB junction reverse leak currents Icbo and electronic noise spectrums Svcb(f) of color TV high frequency video transistors(2688B, 2688S, 2688) produced by three kinds of techniques. Its discussed that interface state and surface movable charge cause surface leak current, which make devices produce electronic noise and affect other parameters such as reverse breakdown voltage and small current amplif ying coefficient. The experiment showed that surface leak current can be controlled, transistor electronic noise can be lowered and the reliability, stability and life can be enhanced by adopting surface passivation technique.

Key words: noise, reliability, transistor

CLC Number: 

  • TN365