Abstract: The burst and g-r (generation-recombination) noise in high-power quantum well semiconductor lasers were studied theoretically and experimentally. The results indicate that they are related with the aging current.Maybe they come from the same defects source. If the aging current is much larger than the threshold current I_th, the burst noise and the g-r noise will be induced, even multi-g-r noise appears. By comparing the characteristic parameters of optic and electric derivative curves before and after aging, it is discovered that the device which produces burst and g-r noise after aging is failure device. The reasons of producing burst, g-r noise and multi-g-r noise are discussed on the basis of the theory of the defect energy level Et and the variation of the height of the potential barrier of p-n junction.

Key words: electrical noise, semiconductor laser, reliability