Abstract: The fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal are described. The results indicate that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V that are in agreement with the expected values. Moreover, the excellent rectification characteristic and transparentness in the visible light range were applied in the device.

Key words: ZnO, diamond, p-n junction, fabrication