自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性

Growth and Electrical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films

SUN Jian¹,², BAI Yi zhen¹,², YANG Tian peng³, SUN Jing chang², DU Guo tong²,³

1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116023, Liaoning Province, China; 2. College of Physics and Opto\|electronic Engineering, Dalian University of Technology, Dalian 116023, China; 3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2006-11-01 Revised:1900-01-01 Online:2007-09-26 Published:2007-09-26
Contact: BAI Yi zhen

Abstract

Abstract: ZnO thin films were prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by metal organic chemical vapor deposition (MOCVD) with two-step growth method. The growth and electrical properties of the ZnO films are characterized experimentally. The ZnO film deposited at a substrate temperature of 600 ℃ exhibited a clean surface with c-preferred orientation and had a mobility of 3.79 cm²/(V·s).

Key words: SAW filter, diamond, ZnO film, metal organic chemical vapor deposition

CLC Number:

O484.5

SUN Jian,, BAI Yi zhen,, YANG Tian peng, SUN Jing chang, DU Guo tong,. Growth and Electrical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films[J].J4, 2007, 45(05): 822-826.

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Growth and Electrical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films

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